NiO thin films deposited by DC reactive sputtering were used as anode buffer layer in organic photovoltaiccells (OPVs) based on CuPc/C60planar heterojunctions. Firstly we show that the properties of the NiOfilms depend on the O2 partial pressure during deposition. The films are first conductive between 0 and2% partial oxygen pressure, then they are semiconductor and p-type between 2 and 6% partial oxygenpressure, between 6 and 9% partial oxygen pressure the conduction is very low and the films seem to be n-type and finally, for a partial oxygen pressure higher than 9%, the conduction is p-type. The morphology ofthese films depends also on the O2 partial pressure. When the NiO films is thick of 4 nm, its peak to valleyroughness is 6 nm, when it is sputtered with a gas containing 7.4% of oxygen, while it is more than double,13.5 nm, when the partial pressure of oxygen is 16.67%. This roughness implies that a forming process,i.e. a decrease of the leakage current, is necessary for the OPVs. The forming process is not necessary ifthe NiO ABL is thick of 20 nm. In that case it is shown that optimum conversion efficiency is achievedwith NiO ABL annealed 10 min at 400◦C.