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Article Dans Une Revue Optical Materials Année : 2009

Photoluminescence properties of 4,5-dimethyl-4′,5′-di(methylamido) tetrathiafulvalene thin film grown by thermal evaporation

Zacaria Essaidi
  • Fonction : Auteur
W. Bała
  • Fonction : Auteur
Ileana Rau
  • Fonction : Auteur

Résumé

In this paper, a temperature dependence study of photoluminescence spectra of vacuum-deposited organic donor tetrathiafulvalene: 4,5-dimethyl-4′,5′-di(methylamido) tetrathiafulvalene thin layers is presented. The investigated layers were deposited in a high vacuum (2 × 10−6 Torr) using molecular beam deposition (MBD) technique on n-doped (1 1 1) oriented silicon substrates. The photoluminescence studies were carried out in the temperatures range [13 K–325 K]. Under a 325 nm wavelength light excitation and at low-temperature a broad luminescence emission peak was observed in the UV–Visible and 2 peaks in the near infrared region. The photoluminescence spectra exhibit temperature dependence with a maximum emission at 180 K. Furthermore, an enhancement of the photoluminescence signal under a continuous excitation was observed at room temperature.

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Dates et versions

hal-03420363 , version 1 (09-11-2021)

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Citer

Zacaria Essaidi, W. Bała, Ileana Rau, Cécile Mézière, Patrick Batail, et al.. Photoluminescence properties of 4,5-dimethyl-4′,5′-di(methylamido) tetrathiafulvalene thin film grown by thermal evaporation. Optical Materials, 2009, 31 (6), pp.831 - 836. ⟨10.1016/j.optmat.2008.09.011⟩. ⟨hal-03420363⟩

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